SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

A solid-state imaging device comprising a plurality of imaging pixels (100) formed on a base consisting of a semiconductor substrate (101). Each imaging pixel (100) has: a photoconductive film (126) that generates signal charge by performing photoelectric conversion on incident light; and a storage diode (104) that is formed inside the semiconductor substrate (101) and stores the charge generated by the photoconductive film (126). Pinning layers (107) are formed in this solid-state imaging device so as to cover the storage diodes (104) except for parts thereof that connect to connection electrodes (110). The pinning layers (107), which serve to inhibit surface recombination of charge, are p+ layers, the conductivity type opposite to that of the storage diodes (104), which are n+ layers.