| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin-film silicon-based photoelectric conversion device which is capable of efficiently collecting currents, exhibits low optical absorption loss, and has high light reflectivity on the rear-surface electrode side. <P>SOLUTION: A photoelectric conversion device 100 comprises, in the order from the light incident side: a transparent electrode layer 2; a silicon-based photoelectric conversion layer 3 formed by deposition; a rear-surface transparent electrode layer 4 consisting essentially of a transparent conductive oxide; a comb-shaped rear-surface metal electrode layer 5 consisting essentially of a metal, or a rear-surface metal electrode layer having a thickness of 10 to 100 nm; and a reflective layer 6 consisting essentially of barium sulfate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
