| 摘要 |
<P>PROBLEM TO BE SOLVED: To perform quality determination of an insulating film about RTN, quality determination of a manufacturing process, circuit design, and the like, more accurately. <P>SOLUTION: In the evaluation method of a semiconductor device comprising an MISFET having a gate insulating film, RTN of a plurality of MISFETs is measured, at least two parameters out of the position of a trap in the gate insulating film, energy of a trap, time constant of the RTN, and the RTM amplitude are extracted and then correlation of two parameters is determined. <P>COPYRIGHT: (C)2012,JPO&INPIT |
