| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to form a variable resistance film by an oxide film in which a second element is oxidized, thereby enhancing switching features of the semiconductor device using a resistance change. CONSTITUTION: A second element for preventing separation of a first element from a substrate is mixed in a first conductive film(22A). A variable resistance film(23A) is formed on the first conductive film. A second conductive film(24A) is formed on the variable resistance film. The second conductive film, the variable resistance film, and the first conductive film are selectively etched to form a pattern. A diffusion preventing film is formed on a surface of the pattern. The second element is eliminated from the first conductive film by heat processing.
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