发明名称 STRUCTURES AND METHODS FOR IMPROVING SOLDER BUMP CONNECTIONS IN SEMICONDUCTOR DEVICES
摘要 <p>Structures with improved solder bump connections and methods of fabricating such structures are provided herein. The method includes forming an upper wiring layer in a dielectric layer and depositing one or more dielectric layers on the upper wiring layer. The method further includes forming a plurality of discrete trenches in the one or more dielectric layers extending to the upper wiring layer. The method further includes depositing a ball limiting metallurgy or under bump metallurgy in the plurality of discrete trenches to form discrete metal islands in contact with the upper wring layer. A solder bump is formed in electrical connection to the plurality of the discrete metal islands.</p>
申请公布号 KR101120769(B1) 申请公布日期 2012.03.22
申请号 KR20090086802 申请日期 2009.09.15
申请人 发明人
分类号 H01L23/488 主分类号 H01L23/488
代理机构 代理人
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