发明名称 PATTERN FORMATION METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a pattern formation method capable of preventing reduction in dimensional accuracy and positional accuracy of a pattern finally formed on a semiconductor substrate; and a photomask formed by the method. <P>SOLUTION: A pattern formation method in which a pattern is formed on a semiconductor substrate by first exposure, and a pattern is formed in a cutout area in which the pattern is not formed by the first exposure, by second exposure, comprises: providing a photomask 17 formed by forming on a single transparent substrate 11 a first exposure pattern 12 for forming the first pattern and a second exposure pattern 13 for forming the second pattern; and when forming the first and second patterns on the semiconductor substrate by using the photomask 17, setting an exposure condition so that a first exposure condition and a second exposure condition are different. This makes a method for preferentially exposing one pattern advantageous. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012059875(A) 申请公布日期 2012.03.22
申请号 JP20100200919 申请日期 2010.09.08
申请人 TOPPAN PRINTING CO LTD 发明人 KOJIMA YOSUKE
分类号 H01L21/027;G03F1/70;G03F7/40 主分类号 H01L21/027
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