MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a technique to form an excellent diffusion barrier film on Cu wiring by plasma CVD method.

SOLUTION: A process of forming a silicon nitride film 21 for preventing Cu diffusion on Cu wiring 19 formed by damascene method comprises the steps of: transporting a substrate 1 in which the Cu wiring 19 is formed into a chamber of a plasma CVD apparatus and heating the substrate 1 to a predetermined temperature; applying reduction treatment to the surface of the Cu wiring 19 by supplying ammonia to the chamber and plasma-decomposing the ammonia by a first RF power; and forming the silicon nitride film 21 on the Cu wiring 19 by supplying a raw material gas containing ammonia and mono-silane to the chamber while the RF power is applied and plasma-decomposing the ammonia and silane-based gas by a second RF power.

COPYRIGHT: (C)2012,JPO&INPIT