发明名称 |
Vacuum Processing Apparatus, Vacuum Processing Method, and Micro-Machining Apparatus |
摘要 |
Disclosed is a technology in which a nozzle part is mounted in a vacuum chamber and a silicon substrate is held to face a discharge hole of the nozzle part. For example, ClF3 gas and Ar gas are supplied from the nozzle part and the mixed gas is discharged from the nozzle part under a vacuum atmosphere. By doing this, the mixed gas is adiabatically expanded and the Ar atoms or ClF3 molecules are combined, which become a gas cluster. The gas cluster is irradiated to the surface of the silicon substrate without being ionized and, as a result, the surface of the silicon surface becomes a porous state. Then, lithium is grown on the surface of the silicon substrate in a separate vacuum chamber 41 by sputtering without breaking the vacuum.
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申请公布号 |
US2012071003(A1) |
申请公布日期 |
2012.03.22 |
申请号 |
US201113233150 |
申请日期 |
2011.09.15 |
申请人 |
DOBASHI KAZUYA;FUSE TAKASHI;HOSHINO SATOHIKO;SENOO TAKEHIKO;YOSHINO YU |
发明人 |
DOBASHI KAZUYA;FUSE TAKASHI;HOSHINO SATOHIKO;SENOO TAKEHIKO;YOSHINO YU |
分类号 |
H01L21/31;C23C14/16;C23C14/34;C23C16/455;C23C16/48;C23F1/08 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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