发明名称 INTEGRATED CIRCUIT LEAKAGE POWER REDUCTION USING ENHANCED GATED-Q SCAN TECHNIQUES
摘要 Specific logic gates for q-gating are selected by determining the minimum leakage state for a circuit design and then selecting logic gates that hold the circuit design in its lowest leakage state. Depending on the input desired to implement the minimum leakage state, the gate may be selected as a NOR or OR gate. Q-gating that is implemented with gates chosen to implement the minimum leakage state may be enabled during selected operating modes. The minimum leakage state of a circuit can be determined with an automatic test pattern generation (ATPG) tool.
申请公布号 WO2012037338(A1) 申请公布日期 2012.03.22
申请号 WO2011US51745 申请日期 2011.09.15
申请人 QUALCOMM INCORPORATED;SETHURAM, RAJAMANI;ARABI, KARIM 发明人 SETHURAM, RAJAMANI;ARABI, KARIM
分类号 G01R31/3183;G01R31/3185 主分类号 G01R31/3183
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