| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element capable of improving luminance efficiency and reducing drive voltage, and to provide a method for manufacturing the same. <P>SOLUTION: The semiconductor light-emitting element comprises: a light-emitting part 40 having an n-type semiconductor layer having a nitride semiconductor, a p-type semiconductor layer having a nitride semiconductor, a well layer 42 provided between the n-type semiconductor layer and the p-type semiconductor layer and having a nitride semiconductor, and a barrier layer 41 having a nitride semiconductor; and a laminate 30 provided between the light-emitting part 40 and the n-type semiconductor layer and containing a first layer 31 and a second layer 32 which have different composition ratios of In respectively. When a film thickness of the barrier layer 41 is less than or equal to 10 nm, an average composition ratio of In of the laminate 30 is represented as p, and an average composition ratio of In of the light-emitting part 40 is represented as q, a relation of 0.4<p/q≤0.7 is satisfied, the thickness of the barrier layer is less than or equal to 10 nm, and more than 30 pairs of the first layer and the second layer are provided alternately in the laminate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
