| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-frequency semiconductor switch device capable of shortening the switching time of a switch. <P>SOLUTION: A control circuit, connected to a negative-voltage generation circuit, includes an output node connected to a high-frequency switch circuit and a level shift circuit that supplies a signal of a negative potential as a low-level control signal supplied to the high-frequency switch circuit, and discharges electric charges stored in the output node before the level shift circuit operates. <P>COPYRIGHT: (C)2012,JPO&INPIT |
