发明名称 THIN FILM TRANSISTOR, ITS MANUFACTURING METHOD, AND DISPLAY DEVICE INCLUDING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a thin film transistor whose content of metal catalyst remaining in a crystallized semiconductor layer is effectively reduced. <P>SOLUTION: A thin film transistor, its manufacturing method, and a display device including the same are provided. The thin film transistor comprises: a substrate; a semiconductor layer which is located on the substrate and which is crystallized utilizing metal catalyst; a gate electrode disposed on and insulated from the semiconductor layer; and a gettering layer which is located between the semiconductor layer and the gate electrode and which is formed using a metal oxide with lower diffusion coefficient than the metal catalyst in the semiconductor layer. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012060109(A) 申请公布日期 2012.03.22
申请号 JP20110171657 申请日期 2011.08.05
申请人 SAMSUNG MOBILE DISPLAY CO LTD 发明人 PARK BYOUNG-KEON;SEO JIN-WOOK;YI GI-YON;LEE DONG-HYUN;YI GIL-WON;PARK CHONG-RYOK;JEONG YUN-MO;YI TAK-YONG;SOH BYONG-SOO;JEONG MIN-JIE;PARK SEUNG-KYU;SON YONG-DUCK;JEONG JIE-WON
分类号 H01L21/336;G02F1/1368;H01L21/20;H01L29/786;H01L51/50 主分类号 H01L21/336
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