发明名称 |
THIN FILM TRANSISTOR, ITS MANUFACTURING METHOD, AND DISPLAY DEVICE INCLUDING THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film transistor whose content of metal catalyst remaining in a crystallized semiconductor layer is effectively reduced. <P>SOLUTION: A thin film transistor, its manufacturing method, and a display device including the same are provided. The thin film transistor comprises: a substrate; a semiconductor layer which is located on the substrate and which is crystallized utilizing metal catalyst; a gate electrode disposed on and insulated from the semiconductor layer; and a gettering layer which is located between the semiconductor layer and the gate electrode and which is formed using a metal oxide with lower diffusion coefficient than the metal catalyst in the semiconductor layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012060109(A) |
申请公布日期 |
2012.03.22 |
申请号 |
JP20110171657 |
申请日期 |
2011.08.05 |
申请人 |
SAMSUNG MOBILE DISPLAY CO LTD |
发明人 |
PARK BYOUNG-KEON;SEO JIN-WOOK;YI GI-YON;LEE DONG-HYUN;YI GIL-WON;PARK CHONG-RYOK;JEONG YUN-MO;YI TAK-YONG;SOH BYONG-SOO;JEONG MIN-JIE;PARK SEUNG-KYU;SON YONG-DUCK;JEONG JIE-WON |
分类号 |
H01L21/336;G02F1/1368;H01L21/20;H01L29/786;H01L51/50 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|