| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a storage element and a memory unit which improve heat stability and reduce a write current. <P>SOLUTION: The storage element having magnetization perpendicular to a film surface comprises a storage layer 17 with a magnetization direction varying corresponding to information, a magnetization fixed layer 15 having magnetization perpendicular to the film face, which serves as reference of information stored in the storage layer 17 and an insulation layer 16 of a nonmagnetic material provided between the storage layer 17 and the magnetization fixed layer 15. A magnetization direction of the storage layer 17 is varied by injection of an electron spin polarized in a lamination direction, to record information. Here, a magnitude of an effective anti-magnetic field applied to the storage layer 17 is adjusted to be smaller than a magnitude of saturation magnetization of the storage layer 17. At least boundary faces contacting the storage layer 17 of the insulation layer 16 contacting the storage layer 17 and another layer (cap layer 18) contacting the storage layer 17 on the side opposite to the insulation layer 16 are formed of an oxide film such as MgO and the like. <P>COPYRIGHT: (C)2012,JPO&INPIT |
