| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid state image pickup device capable of suppressing the generation of a dark current and an afterimage, and its manufacturing method. <P>SOLUTION: A solid state image pickup device is composed by forming a plurality of imaging pixels 100 with a semiconductor substrate 101 as a base, and each imaging pixel 100 includes a photoconductive film 126 for photoelectrically converting incident light and generating signal charges, and a storage diode 104 formed inside the semiconductor substrate 101 for storing the charges generated in the photoconductive film 126. Then, in the solid state image pickup device, to the storage diode 104, a pinning layer 107 is formed so as to cover a part except a part connected with a connection electrode 110. The pinning layer 107 is a p<SP POS="POST">+</SP>layer of a conductivity type opposite to the storage diode 104 which is an n<SP POS="POST">+</SP>layer and plays the role of suppressing the surface recombination of the charges. <P>COPYRIGHT: (C)2012,JPO&INPIT |
