| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device in which the width of an element separation trench can be made smaller without causing deterioration of the crystallinity of a semiconductor substrate. <P>SOLUTION: An element separation trench 21 is formed by etching a silicon substrate 2 using a hard mask consisting of a nitride film 51 for a mask and a pad oxide film 52. A liner oxide film 22 is formed on the inner surface of the element separation trench 21 by thermal oxidation method. Subsequently, a semiconductor substrate 2 is disposed in a nitrogen atmosphere and heat-treated. After the heat treatment, the liner oxide film 22 is made thinner by etching. Then, an insulator 23 is embedded in the element separation trench 21 by HDP-CVD method. <P>COPYRIGHT: (C)2012,JPO&INPIT |
