| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which a manufacturing process can be simplified. <P>SOLUTION: A first opening 16 having a first opening diameter and a second opening 17 having a second opening diameter smaller than the first opening diameter are formed on a second interlayer insulating film 14 at once so as to expose an upper face of wire. Next, a high dielectric constant insulating film 19 covering an inner face of the first and second openings is formed. Next, ions are implanted to at least the high dielectric constant insulating film formed on an outer periphery of a bottom face of the first opening by the oblique ion implantation method so as not to implant ions to the high dielectric constant insulating film formed on a bottom face of the second opening. Thereafter, the high dielectric constant insulating film to which ions are implanted is removed by wet etching. Next, by filling the inside of the first and second openings with a conductive film 21, a contact plug 22 is formed in the first opening, and an anti-fuse element 23 consisting of the high dielectric constant insulating film in the second opening and the conductive film is formed in the second opening. <P>COPYRIGHT: (C)2012,JPO&INPIT |
