| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device including a metal film which has a necessary work function and oxidation resistance with lower costs. <P>SOLUTION: A manufacturing method of a semiconductor device comprises: a step of carrying a substrate on which a metal film is formed on its surface into a processing container; a step of forming a metal oxide film of predetermined film thickness on the metal film formed on the substrate surface by supplying and exhausting a material gas and an oxidation source into and from the processing container; and a step of carrying out a processed substrate from the processing container. The step of forming the metal oxide film of the predetermined film thickness oxidizes the surface of the metal film to reform the metal film into a conductive metal oxide layer by introducing the oxygen atom included in the oxidation source into the surface of the metal film through the metal oxide film formed in the process of forming the metal oxide film of the predetermined film thickness using an ozone gas, the oxygen gas, or the oxygen gas activated by the plasma as the oxidation source. <P>COPYRIGHT: (C)2012,JPO&INPIT |
