| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method that can prevent short circuit between first layer wiring and second layer wiring at low cost without using a special mask. <P>SOLUTION: The semiconductor device manufacturing method comprises the steps of patterning first layer wiring 3 including a gate electrode 3g on a substrate 1, depositing a gate insulator 5 and an organic semiconductor layer 7 in this order in a manner to cover the first layer wiring 3, depositing a positive resist film 9 on the organic semiconductor layer 7, forming a resist pattern 9a by patterning the resist film 9 into a shape same as that of the first layer wiring 3 by backside exposure from the substrate 1 side using the first layer wiring 3 as a light shield mask and subsequent development processing, etching the organic semiconductor layer 7 using the resist pattern 9a as a mask to pattern the organic semiconductor layer 7 into a shape same as that of the first layer wiring 3, and patterning the second layer wiring 11 including source electrode 11s/drain electrode 11d on the patterned organic semiconductor layer 7. <P>COPYRIGHT: (C)2012,JPO&INPIT |
