| 发明名称 |
SILICON CARBIDE SEMICONDUCTOR DEVICES |
| 摘要 |
A method of manufacturing a semiconductor device, wherein the method comprises applying a first layer comprising silicon to a second layer comprising silicon carbide, wherein an interface is defined between the first and second layers; and oxidising sonic or all of the first layer.
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| 申请公布号 |
US2012068194(A1) |
申请公布日期 |
2012.03.22 |
| 申请号 |
US201113233146 |
申请日期 |
2011.09.15 |
| 申请人 |
SHIPLEY ADRIAN;MAWBY PHILIP;JENNINGS MICHAEL;COVINGTON JAMES |
发明人 |
SHIPLEY ADRIAN;MAWBY PHILIP;JENNINGS MICHAEL;COVINGTON JAMES |
| 分类号 |
H01L21/30;H01L29/12 |
主分类号 |
H01L21/30 |
| 代理机构 |
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代理人 |
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