发明名称 |
PLASMA DEPOSITION |
摘要 |
An apparatus for depositing a group III metal nitride film on a substrate, the apparatus comprising a plasma generator to generate a nitrogen plasma from a nitrogen source, a reaction chamber in which to react a reagent comprising a group III metal with a reactive nitrogen species derived from the nitrogen plasma so as to deposit a group III metal nitride on the substrate, a plasma inlet to facilitate the passage of nitrogen plasma from the plasma generator into the reaction chamber and a baffle having one or more flow channels for passage of the nitrogen plasma. The baffle is located between the plasma inlet and the substrate and prevents a direct line of passage for nitrogen plasma between the plasma inlet and the substrate.
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申请公布号 |
US2012070963(A1) |
申请公布日期 |
2012.03.22 |
申请号 |
US201013201280 |
申请日期 |
2010.02.12 |
申请人 |
MARTIN CONOR NICHOLAS;RAYNOLDS GUY;GLOWACKI PIOTR;BARIK SATYANARAYAN;CHEN PATRICK PO-TSANG;TREBERT EP FOUQUET MARIE-PIERRE FRANCOISE;GALLIUM ENTERPRIESE PTY LTD. |
发明人 |
MARTIN CONOR NICHOLAS;RAYNOLDS GUY;GLOWACKI PIOTR;BARIK SATYANARAYAN;CHEN PATRICK PO-TSANG;TREBERT EP FOUQUET MARIE-PIERRE FRANCOISE |
分类号 |
H01L21/20;C23C16/34;F15D1/00 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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