SILICON ETCHING FLUID AND METHOD FOR PRODUCING TRANSISTOR USING SAME

摘要

The present invention is a method for producing a transistor having a laminate formed from at least a high dielectric material film and a metal gate by a method for eliminating a dummy gate formed from silicon and substituting a metal gate containing hafnium, zirconium, titanium, tantalum, or tungsten wherein etching of the dummy gate formed from silicon is used. Specifically, the present invention is a silicon etching fluid containing 0.1 - 40% by weight of an alkali compound that is at least one selected from ammonia, diamine, and a polyamine represented by the general formula (1), a prescribed polyhydric alcohol, and 0.01 - 40% by weight of a polyhydric alcohol that is at least one selected from saccharides that are not reductive, as well as 40 - 99.89% by weight water and a method for producing a transistor using the same.