| 摘要 |
<p>A manufacturing method for a semiconductor device according to the present invention includes a process for sputtering a target (100A). The target (100A) comprises a plurality of target tiles (11A) arranged with intervening gaps, a backing plate (15A) for supporting the plurality of target tiles (11A), and a bonding member (17A) provided between the backing plate (15A) and the plurality of target tiles (11A). Each of the plurality of target tiles (11A) includes In, Ga, and Zn. When the target (100A) is viewed from the direction normal to the side where the plurality of target tiles (11A) are arranged, each of the plurality of target tiles (11A) is smaller than an insulating substrate (1) and the bonding member (17A) cannot be seen from the gaps.</p> |
