发明名称 STORAGE ELEMENT AND MEMORY
摘要 <P>PROBLEM TO BE SOLVED: To provide a storage element which has a small magnetic damping constant and can reduce a driving current. <P>SOLUTION: The storage element includes: a magnetic layer which contains carbon and at least one kind of element selected from Fe, Co and Ni, and has the carbon content equal to or more than 3 atom% and less than 70 atom% considering the total content of Fe, Co and Ni, as well as has a magnetic anisotropy perpendicular to the film surface; and an oxide layer which is formed so as to touch the magnetic layer and made of an oxide with the sodium chloride structure or the spinel structure. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012059957(A) 申请公布日期 2012.03.22
申请号 JP20100202332 申请日期 2010.09.09
申请人 SONY CORP 发明人 OMORI HIROYUKI;HOSOMI MASAKATSU;BESSHO KAZUHIRO;HIGO YUTAKA;YAMANE ICHIYO;UCHIDA HIROYUKI
分类号 H01L27/105;H01L21/8246;H01L29/82;H01L43/08;H01L43/10 主分类号 H01L27/105
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