| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an ion implantation method realizing a predetermined implantation amount distribution on a glass substrate by at least partially superposing a plurality of ribbon-shaped ion beams, in which a beam current density distribution of each ribbon-shaped ion beam is efficiently adjusted. <P>SOLUTION: An ion implantation method includes: starting an ion beam start-up operation for a plurality of ion beam supply devices; thereafter, individually detecting completion of the ion beam start-up operation for the respective devices; based on a result of the detecting, identifying the ion beam supply device, ion beam start-up operation of which is completed last; and thereafter, when superposing beam current density distributions formed on a glass substrate by ribbon-shaped ion beams supplied from the respective ion beam supply devices, adjusting the beam current density distribution of the ribbon-shaped ion beam supplied from the identified ion beam supply device so that the interposed beam current density distribution corresponds to a predetermined distribution. <P>COPYRIGHT: (C)2012,JPO&INPIT |
