发明名称 LAYER STACKS AND INTEGRATED CIRCUIT ARRANGEMENTS
摘要 In various embodiments, a layer stack is provided. The layer stack may include a carrier; a first metal disposed over the carrier; a second metal disposed over the first metal; and a solder material disposed above the second metal or a material that provides contact to a solder that is supplied by an external source. The second metal may have a melting temperature of at least 1800° C. and is not or substantially not dissolved in the solder material at least one of during a soldering process and after the soldering process.
申请公布号 US2012068345(A1) 申请公布日期 2012.03.22
申请号 US20100883362 申请日期 2010.09.16
申请人 SCHMIDT TOBIAS;NAPETSCHNIG EVELYN;STUECKLER FRANZ;PUGATSCHOW ANTON;INFINEON TECHNOLOGIES AG 发明人 SCHMIDT TOBIAS;NAPETSCHNIG EVELYN;STUECKLER FRANZ;PUGATSCHOW ANTON
分类号 H01L23/522 主分类号 H01L23/522
代理机构 代理人
主权项
地址