发明名称 |
LAYER STACKS AND INTEGRATED CIRCUIT ARRANGEMENTS |
摘要 |
In various embodiments, a layer stack is provided. The layer stack may include a carrier; a first metal disposed over the carrier; a second metal disposed over the first metal; and a solder material disposed above the second metal or a material that provides contact to a solder that is supplied by an external source. The second metal may have a melting temperature of at least 1800° C. and is not or substantially not dissolved in the solder material at least one of during a soldering process and after the soldering process. |
申请公布号 |
US2012068345(A1) |
申请公布日期 |
2012.03.22 |
申请号 |
US20100883362 |
申请日期 |
2010.09.16 |
申请人 |
SCHMIDT TOBIAS;NAPETSCHNIG EVELYN;STUECKLER FRANZ;PUGATSCHOW ANTON;INFINEON TECHNOLOGIES AG |
发明人 |
SCHMIDT TOBIAS;NAPETSCHNIG EVELYN;STUECKLER FRANZ;PUGATSCHOW ANTON |
分类号 |
H01L23/522 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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