发明名称 SEMICONDUCTOR STRUCTURE AND METHOD FOR MAKING SAME
摘要 One or more embodiments relate to a method of forming a semiconductor structure, comprising: providing a semiconductor substrate; forming an opening within the substrate; forming a conductive layer within the opening; and forming a semiconductor layer over the conductive layer.
申请公布号 US2012068304(A1) 申请公布日期 2012.03.22
申请号 US20100885704 申请日期 2010.09.20
申请人 KAUTZSCH THORALF 发明人 KAUTZSCH THORALF
分类号 H01L29/92;H01L21/02 主分类号 H01L29/92
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