| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device including a semiconductor element capable of preventing the occurrence of leakage current between a drain region and a depletion layer due to the segregation of impurity. <P>SOLUTION: A semiconductor device comprises: a semiconductor substrate SUB having a primary surface; a core transistor that is formed on the primary surface and constitutes a logic circuit; and an I/O transistor constituting an input/output circuit. The distance from the primary surface to the bottom of an n-type impurity region NR of an I/O n-type transistor is longer than that from the primary surface to the bottom of the n-type impurity region NR of a core n-type transistor. The distance from the primary surface to the bottom of a p-type impurity region PR of an I/O p-type transistor is longer than that from the primary surface to the bottom of the p-type impurity region PR of a core p-type transistor. The distance from the primary surface to the bottom of the n-type impurity region of the I/O n-type transistor is longer than that from the primary surface to the bottom of the p-type impurity region of the I/O p-type transistor. <P>COPYRIGHT: (C)2012,JPO&INPIT |
