| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of obtaining a higher heat generation efficiency and reducing a rewriting current by covering the circumference of a phase change recording element with a vacuum air gap part with a low conductivity. <P>SOLUTION: A semiconductor device has: a semiconductor substrate; an element layer including a switching element formed on the semiconductor substrate; a phase change recording element 10 configured by laminating a heater electrode 11 connected to the switching element, a phase change recording material layer 12 that changes a phase by heat from the heater electrode 11, and an upper electrode 13 on the element layer sequentially; an interlayer insulating film 21b laminated on the phase change recording element 10; and a vacuum air gap part 15 provided between the element layer and the interlayer insulating film 21b, and formed in the circumference of any one or both of the heater electrode 11 and the phase change recording material layer 12. <P>COPYRIGHT: (C)2012,JPO&INPIT |
