MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of forming a halo region having an appropriate concentration profile on a transistor in which a cap film on a gate electrode is thick and a space ratio aspect between adjacent transistors is large.

SOLUTION: A manufacturing method of a semiconductor device according to an embodiment includes: a step of forming a first gate electrode and a second gate electrode on a substrate; a step of forming a first halo region under the first gate electrode and a second halo region under the second gate electrode; and a step of forming a first cap film whose bottom face and side face are covered by a first insulating film and a second cap film whose bottom face and side face are covered by a second insulating film. The first halo region is formed by driving a first impurity into the substrate through the second insulating film. The second halo region is formed by driving a second impurity into the substrate through the first insulating film.

COPYRIGHT: (C)2012,JPO&INPIT