| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device having a structure in which an MTJ element hardly deteriorates in a manufacturing step even if the MTJ element is miniaturized. <P>SOLUTION: A semiconductor memory device according to an embodiment comprises a semiconductor substrate. A selection transistor is formed on the semiconductor substrate. A lower electrode is electrically connected to one diffusion layer of the selection transistor. A magnetic tunnel junction element is provided on the lower electrode. A first protection film is provided on the side face of the magnetic tunnel junction element. An upper electrode is provided on the magnetic tunnel junction element and the first protection film. A second protection film is provided on the side faces of the upper electrode, the first protection film, and the lower electrode. <P>COPYRIGHT: (C)2012,JPO&INPIT |
