发明名称 DIRECT CURRENT REACTIVE SPUTTERING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To prevent a reactant gas from flowing into a space defined between targets facing each other in a sputtering apparatus in which targets are arranged opposite to each other. <P>SOLUTION: A direct current reactive sputtering apparatus includes: a sputter source 1 including the targets 5, 6 arranged opposite to each other; and a film deposition chamber 2 that is communicated with the sputter source 1 and stores a substrate W that is an object to be treated. In an opening 3 of the sputter source 1, a constricted part 20 that prevents the reactant gas of the film deposition chamber 2 from intruding into the sputter source 1, is formed. The constricted part 20 is defined by protrusions 22, 24 that are protruded from inner walls 31, 32 facing each other in the opening 3, respectively. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012057216(A) 申请公布日期 2012.03.22
申请号 JP20100202022 申请日期 2010.09.09
申请人 SEIKO EPSON CORP 发明人 FUKADA SHINICHI
分类号 C23C14/00 主分类号 C23C14/00
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