| 摘要 |
Disclosed is a photovoltaic device that includes: a substrate; a first electrode disposed on the substrate; a photoelectric transformation layer disposed on the first electrode, the photoelectric transformation layer comprising a light absorbing layer which comprises at least one pair of an intrinsic first sub-layer and an intrinsic second sub-layer, each of which comprises hydrogenated amorphous silicon and hydrogenated proto-crystalline silicon; and a second electrode disposed on the photoelectric transformation layer; wherein a thickness ratio between the first sub-layer and the second sub-layer in each of the pair is constant.
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