发明名称 |
COMPOUND SEMICONDUCTOR DEVICE INCLUDING AIN LAYER OF CONTROLLED SKEWNESS |
摘要 |
A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive. |
申请公布号 |
US2012067275(A1) |
申请公布日期 |
2012.03.22 |
申请号 |
US201113237084 |
申请日期 |
2011.09.20 |
申请人 |
IMANISHI KENJI;KIKKAWA TOSHIHIDE;TANAKA TAKESHI;MORIYA YOSHIHIKO;OTOKI YOHEI;HITACHI CABLE CO., LTD.;FUJITSU LIMITED |
发明人 |
IMANISHI KENJI;KIKKAWA TOSHIHIDE;TANAKA TAKESHI;MORIYA YOSHIHIKO;OTOKI YOHEI |
分类号 |
C30B25/10;C30B25/02 |
主分类号 |
C30B25/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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