| 摘要 |
<P>PROBLEM TO BE SOLVED: To contribute to improvement of the performance of a semiconductor integrated circuit without requiring fine adjustment or improvement on the light source side by preventing degradation of the circuit due to uneven temperature which occurs during optical annealing. <P>SOLUTION: In a method of manufacturing a semiconductor device, such a region of a substrate on which patterns 30, 40 of a semiconductor integrated circuit are formed as the rate of absorption of light irradiated for annealing is equal to or lower than a fixed value is defined as a sparse pattern region 100, and a thin film 60 for improving the rate of light absorption is formed locally on the sparse pattern region 100. Thereafter, annealing is performed by irradiating the substrate, on which the patterns 30, 40 of an integrated circuit and the thin film 60 are formed, with light. <P>COPYRIGHT: (C)2012,JPO&INPIT |
