| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a particularly economical method for producing polysilicon satisfying a future demand for purity. <P>SOLUTION: In this method for producing polycrystalline silicon, silicon is deposited by introducing reaction gas having a silicon-containing component and hydrogen into a reactor. Purified condensate obtained from a first deposition process in a first reactor is supplied to a second reactor, and used for a second deposition process in a second reactor. <P>COPYRIGHT: (C)2012,JPO&INPIT |
