| 摘要 |
A semiconductor device manufacture method includes: forming a first film above a semiconductor substrate; forming a first mask film above the first film; patterning the first mask film; executing a plasma process for a side wall of the patterned first mask film to transform the side wall into a transformed layer; after the plasma process, forming a second mask film covering the first mask film; etching the second mask film to remove the second mask film above the first mask film and leave the second mask film formed on the side wall; after the etching the second mask film, removing the transformed layer; and after the removing the transformed layer, etching the first film by using the first mask film and the second mask film as mask.
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