发明名称 |
Systems and Methods for Forming Metal Oxide Layers |
摘要 |
A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds. |
申请公布号 |
US2012067283(A1) |
申请公布日期 |
2012.03.22 |
申请号 |
US201113302223 |
申请日期 |
2011.11.22 |
申请人 |
VAARTSTRA BRIAN A.;QUICK TIMOTHY A.;MICRON TECHNOLOGY, INC. |
发明人 |
VAARTSTRA BRIAN A.;QUICK TIMOTHY A. |
分类号 |
C23C16/44;C23C16/40;C23C16/455;H01L21/314;H01L21/316 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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