发明名称 Systems and Methods for Forming Metal Oxide Layers
摘要 A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.
申请公布号 US2012067283(A1) 申请公布日期 2012.03.22
申请号 US201113302223 申请日期 2011.11.22
申请人 VAARTSTRA BRIAN A.;QUICK TIMOTHY A.;MICRON TECHNOLOGY, INC. 发明人 VAARTSTRA BRIAN A.;QUICK TIMOTHY A.
分类号 C23C16/44;C23C16/40;C23C16/455;H01L21/314;H01L21/316 主分类号 C23C16/44
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