| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve line edge roughness of an etching mask in a method of etching an inorganic compound film by using a reverse NIL method and in a method of manufacturing a semiconductor optical element. <P>SOLUTION: This method includes a process to press a mold having a prescribed pattern against a resin layer 27 after forming the resin layer 27 on an insulating film 25 formed on a substrate product 30, an etching-back process to expose the resin layer 27 by etching the resin layer 28 by RIE using CF<SB POS="POST">4</SB>gas and oxygen gas after covering the resin layer 27 with a resin layer 28 containing Si, a process to expose the insulating film 25 by selectively etching the resin layer 27, and a process to form a prescribed pattern on the insulating film 25 by etching the insulating film 25 with the resin layer 28 used as a mask. RIE is carried out while removing Si products produced by etching since it is carried out while impressing a self-bias. <P>COPYRIGHT: (C)2012,JPO&INPIT |
