SEMICONDUCTOR DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a novel driver circuit that can achieve lower power consumption as a whole by: suppressing the leakage of holding charge by avoiding the range of sudden increase in OFF current in a manner that when an active matrix semiconductor display device performs counter common inversion driving, the gate bias is set substantially the same as that of conventional inversion driving; securing the ON/OFF margin of a pixel TFT; and securing the gate breakdown voltage by keeping the gate bias applied to the pixel TFT in the vicinity of the conventional voltage.

SOLUTION: A semiconductor display device of the present invention includes a tristate buffer in a gate signal line side driver circuit. By applying different buffer potentials in a frame where a counter common potential is a positive potential and in a frame where it is a negative potential, the voltage amplitude at the counter common inversion driving can be decreased while securing the ON/OFF margin of the pixel TFT.

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