| 发明名称 |
FINE WIRE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a fine wire that is finer than 1 nm. <P>SOLUTION: The fine wire is made by linking a plurality of clusters by regulating the position of each silicon (Si) atom so that the internal energy is minimized, the cluster being consisting only of 24 silicon (Si) atoms and having a tetradecahedron structure with two parallelly-facing hexagonal planes and twelve pentagonal planes. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012056843(A) |
申请公布日期 |
2012.03.22 |
| 申请号 |
JP20110234219 |
申请日期 |
2011.10.25 |
| 申请人 |
IHI CORP;TSUBURAYA KAZUO |
发明人 |
EGUCHI HARUKI;FUCHIGAMI KENJI;YANO TOSHIKAZU;TSUBURAYA KAZUO |
| 分类号 |
C01B33/02;B82Y30/00;B82Y40/00 |
主分类号 |
C01B33/02 |
| 代理机构 |
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