发明名称 DETECTION CIRCUIT FOR MIXED ASYNCHRONOUS AND SYNCHRONOUS MEMORY OPERATION
摘要 A memory access mode detection circuit and method for detecting and initiating memory access modes for a memory device The memory access mode detection circuit receives the memory address signals, the control signals, and the clock signal and generates a first mode detection signal in response to receipt of the memory address signals or a first combination of control signals. An first mode initiation signal is generated a time delay subsequent to the detection signal to initiate the first mode memory access operation. In response to receipt of a second combination of control signals and an active clock signal, the memory access mode detection circuit further generates a second mode detection signal to initiate a second mode memory access operation and to suppress generation of the first mode detection signal, thereby canceling the first mode memory access operation.
申请公布号 US2012072682(A1) 申请公布日期 2012.03.22
申请号 US201113308333 申请日期 2011.11.30
申请人 LOVETT SIMON J.;MICRON TECHNOLOGY, INC. 发明人 LOVETT SIMON J.
分类号 G06F12/00;G06F13/42;G11C7/00;G11C7/10;G11C11/40;G11C11/406;G11C11/413;H01L 主分类号 G06F12/00
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