MEMORY AND OPERATION METHOD THEREFOR

摘要

An operation method for a memory device having a plurality of memory cells includes: reading the plurality of memory cells by a first word line voltage to get a first number of a first logic state; reading the plurality of memory cells by a second word line voltage to get a second number of the first logic state, the second word line voltage different from the first word line voltage; and using the second word line voltage as a target word line voltage if the first number of the first logic state is equal to the second number of the first logic state.