发明名称 INTEGRATED CIRCUIT ESD PROTECTION USING SUBSTRATE IN ESD CURRENT PATH
摘要 A method for conducting ESD current through an integrated circuit formed on a semiconductor substrate includes sensing an ESD potential between a first I/O pad and a second I/O pad of the integrated circuit, providing a current path for ESD current from the first I/O pad of the integrated circuit to a portion of a first metal line in the integrated circuit, providing a current path for ESD current from the portion of the first metal line to the substrate, and providing a current path for ESD current from the substrate to the second I/O pad of the integrated circuit.
申请公布号 US2012069478(A1) 申请公布日期 2012.03.22
申请号 US20100884423 申请日期 2010.09.17
申请人 CAPLAN RANDY JACOB;COLE ANDREW;FOVEON, INC. 发明人 CAPLAN RANDY JACOB;COLE ANDREW
分类号 H02H9/04 主分类号 H02H9/04
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