发明名称 |
INTEGRATED CIRCUIT ESD PROTECTION USING SUBSTRATE IN ESD CURRENT PATH |
摘要 |
A method for conducting ESD current through an integrated circuit formed on a semiconductor substrate includes sensing an ESD potential between a first I/O pad and a second I/O pad of the integrated circuit, providing a current path for ESD current from the first I/O pad of the integrated circuit to a portion of a first metal line in the integrated circuit, providing a current path for ESD current from the portion of the first metal line to the substrate, and providing a current path for ESD current from the substrate to the second I/O pad of the integrated circuit. |
申请公布号 |
US2012069478(A1) |
申请公布日期 |
2012.03.22 |
申请号 |
US20100884423 |
申请日期 |
2010.09.17 |
申请人 |
CAPLAN RANDY JACOB;COLE ANDREW;FOVEON, INC. |
发明人 |
CAPLAN RANDY JACOB;COLE ANDREW |
分类号 |
H02H9/04 |
主分类号 |
H02H9/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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