| 摘要 |
A control circuit during an erase operation sets a voltage of a first line connected to a selected cell unit to a voltage larger than a voltage of a gate of a first transistor included in the selected cell unit by an amount of a first voltage, sets a voltage difference between a voltage of a first line connected to an unselected cell unit and a voltage of a gate of a first transistor included in the unselected cell unit to a second voltage which differs from the first voltage, applies in the selected cell unit and the unselected cell unit a third voltage to a gate of at least one of dummy memory transistors in a dummy memory string, and applies a fourth voltage to a gate of another one of the dummy memory transistors in the dummy memory string, the fourth voltage being lower than the third voltage.
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