发明名称 CdZnO OR SnZnO BUFFER LAYER FOR SOLAR CELL
摘要 A structure for use in a photovoltaic device is disclosed, the structure includes a substrate, a buffer material, a barrier material in contact with the substrate; and a transparent conductive oxide between the buffer material and the barrier material. The buffer material comprises at least one of CdZnO and SnZnO. The structure can be included in a photovoltaic device. Methods for forming the structure are also disclosed.
申请公布号 US2012067414(A1) 申请公布日期 2012.03.22
申请号 US201113240082 申请日期 2011.09.22
申请人 LEE CHUNGHO;ZHAO ZHIBO;BULLER BENYAMIN;SHAO RUI 发明人 LEE CHUNGHO;ZHAO ZHIBO;BULLER BENYAMIN;SHAO RUI
分类号 H01L31/02;B32B5/00;B32B9/00;B32B17/06;H01L31/0216;H01L31/0224;H01L31/0264;H01L31/0272;H01L31/0296;H01L31/0376;H01L31/18 主分类号 H01L31/02
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