发明名称 |
CdZnO OR SnZnO BUFFER LAYER FOR SOLAR CELL |
摘要 |
A structure for use in a photovoltaic device is disclosed, the structure includes a substrate, a buffer material, a barrier material in contact with the substrate; and a transparent conductive oxide between the buffer material and the barrier material. The buffer material comprises at least one of CdZnO and SnZnO. The structure can be included in a photovoltaic device. Methods for forming the structure are also disclosed.
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申请公布号 |
US2012067414(A1) |
申请公布日期 |
2012.03.22 |
申请号 |
US201113240082 |
申请日期 |
2011.09.22 |
申请人 |
LEE CHUNGHO;ZHAO ZHIBO;BULLER BENYAMIN;SHAO RUI |
发明人 |
LEE CHUNGHO;ZHAO ZHIBO;BULLER BENYAMIN;SHAO RUI |
分类号 |
H01L31/02;B32B5/00;B32B9/00;B32B17/06;H01L31/0216;H01L31/0224;H01L31/0264;H01L31/0272;H01L31/0296;H01L31/0376;H01L31/18 |
主分类号 |
H01L31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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