SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

A semiconductor device provided with a first field-effect transistor formed on a first active region (103a) of a semiconductor substrate (100). Said first field-effect transistor has: a first gate-insulating film (106a) formed on top of the first active region (103a); and a first gate electrode (115a) formed on top of the first gate-insulating film (106a). The first gate electrode (115a) comprises: a first metal electrode (107a) formed on top of the first gate-insulating film (106a); a first interface layer (110a) formed on top of the first metal electrode (107a); and a first silicon electrode (111a) formed on top of the first interface layer (110a).