FORMATION METHOD OF PHOTOSENSITIVE RESIST PATTERN AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a formation method of a photosensitive resist pattern in which peeling during exposure is suppressed and a manufacturing method of a semiconductor device using the same.

SOLUTION: The formation method of the photosensitive resist pattern comprises: a step of applying wet etching processing to a surface of a silicon substrate to which dry etching has been applied with acid solution or alkali solution; a step of applying surface processing to be terminated with a hydroxyl group to the surface of the silicon substrate to which wet etching processing has been applied; a step of applying surface processing for replacing a hydrogen atom of the hydroxyl group with an organosilicon compound group to the surface of the silicon substrate to which surface processing to be terminated with the hydroxyl group has been applied; and a step of forming a photosensitive resist pattern on the surface of the silicon substrate to which surface processing for replacing the hydrogen atom of the hydroxyl group with the organosilicon compound group has been applied.

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