| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide resist pattern forming method and a device for the same, which can improve the protection performance of a first resist pattern and the in-plane coating performance of a second resist while saving the resist. <P>SOLUTION: In the resist pattern formation in which a lithography process of performing lithography processing such as resist coating, exposure, development and the like on a wafer to form a predetermined pattern is repeated, a resist containing a cross-linking agent is applied (S-1) to the wafer, and then exposed (S-4) and developed (S-6) to form a first resist pattern. After irradiating (S-7) the first resist pattern with UV-rays for a predetermined time and heating (S-8) the wafer on which the first resist pattern is formed at a predetermined temperature, a second resist is applied (S-9) to the wafer on which the first resist pattern is formed, exposed (S-12) and developed (S-14) to form a second resist pattern. <P>COPYRIGHT: (C)2012,JPO&INPIT |
