发明名称 SILICON-GERMANIUM FILM AND METHOD OF PRODUCING SILICON-GERMANIUM FILM
摘要 <P>PROBLEM TO BE SOLVED: To provide a composition used for obtaining a silicon semiconductor film for a solar cell by formation of a coating film in the air and heating or laser irradiation of its precursor, and to provide a coating type silicon-germanium film and a method of producing a silicon-germanium film. <P>SOLUTION: A germanium resin synthesized using germanium tetrachloride as a starting material and having a main chain skeleton of three-dimensional Ge-Ge bond and a side chain of an organic substituent, and silicon particles are mixed and ground so that the germanium resin covers the surface of the silicon particles. The mixed and ground matter is mixed in an organic dispersion medium to produce a composition, and a film of the composition is formed and subjected to heat treatment or laser irradiation. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012059871(A) 申请公布日期 2012.03.22
申请号 JP20100200843 申请日期 2010.09.08
申请人 TOHOKU UNIV 发明人 WATANABE AKIRA
分类号 H01L21/20;H01L31/04 主分类号 H01L21/20
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