| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the on-resistance of a semiconductor device. <P>SOLUTION: A semiconductor device comprises: a drain layer of a first conductive type; a drift layer of the first conductive type provided on the drain layer; base regions of a second conductive type provided on the drift layer; source regions of the first conductive type selectively provided on the surface of the base regions; first gate electrodes that penetrate through the base regions from the surface of the source regions and are provided in a plurality of first trenches contacting the drift layer via first insulating films; field plate electrodes provided under the first gate electrodes via second insulating films in the first trenches; second gate electrodes provided via third insulating films in second trenches that penetrate through the base regions from the surface of the source regions and contact the drift layer in between the first trenches; a drain electrode connected to the drain layer; and a source electrode connected to the source regions and the base regions. <P>COPYRIGHT: (C)2012,JPO&INPIT |
